Paper Title:
Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films
  Abstract

Er-doped ZnO thin films which emitted intense infrared light in the vicinity of 1.5 μm were investigated from points of view of the microstructure and electrical properties. The result of X-ray diffraction (XRD) pattern revealed that the crystal lattice of ZnO was apparently expanded by doping of Er ions. Electrical resistance in the direction of thickness of Er-doped ZnO film showed linear behavior, which was resemble to that of undoped ZnO film. Infrared light emission phenomenon of the film was related to the chemical / physical state of Er ions in ZnO matrix.

  Info
Periodical
Edited by
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
71-74
DOI
10.4028/www.scientific.net/KEM.301.71
Citation
S. Tanaka, Y. Ishikawa, D. Nezaki, M. Okamoto, N. Shibata, "Structure Analyses and Electrical Properties of Er-Doped ZnO Thin Films", Key Engineering Materials, Vol. 301, pp. 71-74, 2006
Online since
January 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
Abstract:The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function...
137
Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Ching Fang Tseng, Yun Pin Lu, Hsin Han Tung, Pai Chuan Yang
Chapter 3: Electrical, Magnetic and Optical Ceramics
Abstract:This paper describes physical properties of (Ca0.8Sr0.2)TiO3 were deposited by sol-gel method with a fix per-heating temperature of 400oC for...
1171
Authors: Tai Long Gui, Si Da Jiang, Chun Cheng Ban, Jia Qing Liu
Chapter 2:Advanced Material Science and Technology
Abstract:AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly...
409