Paper Title:
Effect of Al-Doping into Zinc Oxide Films Prepared by Pulsed Laser Deposition Method with Various Oxidation Assists
  Abstract

The defect structure of undoped and Al-doped ZnO films deposited by pulse laser deposition was investigated to understand the charge compensation mechanism in those films. Particularly, the effect of oxidation assist, i.e., O2 gas or oxygen radicals, on the defect structure of the resultant films was examined. The examination indicated that the defect structure of undoped ZnO was not affected by the oxidation assist, whereas the properties of Al-doped ZnO obviously varied with the method of oxidation assist. An analyses of oxygen diffusion in these films revealed that Al-doping enhanced formation of oxygen defects in Al-doped ZnO.

  Info
Periodical
Edited by
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
75-78
DOI
10.4028/www.scientific.net/KEM.301.75
Citation
H. Ryoken, I. Sakaguchi, T. Ohgaki, Y. Adachi, T. Takenaka, N. Ohashi, H. Haneda, "Effect of Al-Doping into Zinc Oxide Films Prepared by Pulsed Laser Deposition Method with Various Oxidation Assists", Key Engineering Materials, Vol. 301, pp. 75-78, 2006
Online since
January 2006
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