Paper Title:
Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates
  Abstract

Gallium nitride (GaN) and indium nitride (InN) films were grown on a zinc oxide (ZnO) single crystalline substrate with a (0001) orientation using molecular beam epitaxy. The interfacial structure and relaxation mechanism of the lattice mismatch at the nitride/oxide interface were investigated, particularly the effects of an (In,Ga)N alloy buffer layer on the interfacial structure of the GaN films. This layer significantly improved the crystallinity of the GaN films by gradually relaxing the lattice mismatch between the GaN and ZnO. In spite of the large lattice mismatch between InN and ZnO, InN films with high crystallinity were grown without an (In,Ga)N buffer layer. Structural analysis revealed that an InN layer with low crystallinity formed spontaneously during the initial growth stage, and this amorphous-like layer likely contributed to relaxation of the interfacial stress caused by the lattice mismatch.

  Info
Periodical
Edited by
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
79-82
DOI
10.4028/www.scientific.net/KEM.301.79
Citation
T. Ohgaki, S. Sugimura, H. Ryoken, N. Ohashi, I. Sakaguchi, T. Sekiguchi, H. Haneda, "Interfacial Structure of GaN and InN Thin Films Grown on ZnO Substrates ", Key Engineering Materials, Vol. 301, pp. 79-82, 2006
Online since
January 2006
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