Paper Title:
Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
  Abstract

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

  Info
Periodical
Edited by
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
95-98
DOI
10.4028/www.scientific.net/KEM.301.95
Citation
M. Yamashita, Y. Ishikawa, H. Ohsato, N. Shibata, "Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy", Key Engineering Materials, Vol. 301, pp. 95-98, 2006
Online since
January 2006
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