Paper Title:
Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
| Periodical | Key Engineering Materials (Volume 301) |
|---|---|
| Main Theme | Electroceramics in Japan VIII |
| Edited by | Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 95-98 |
| DOI | 10.4028/www.scientific.net/KEM.301.95 |
| Citation | Masashi Yamashita et al., 2006, Key Engineering Materials, 301, 95 |
| Online since | January, 2006 |
| Authors | Masashi Yamashita, Yukari Ishikawa, Hitoshi Ohsato, Noriyoshi Shibata |
| Keywords | AlBN, Aluminum Nitride (AlN), Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (RF-MBE), X-Ray Photoelectron Spectroscopy (XPS) |
| Price | US$ 28,- |
View full size
Abstract
An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.
