Paper Title:
The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films
  Abstract

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

  Info
Periodical
Key Engineering Materials (Volumes 306-308)
Edited by
Ichsan Setya Putra and Djoko Suharto
Pages
1313-1318
DOI
10.4028/www.scientific.net/KEM.306-308.1313
Citation
J.S. Kim, B.H. Park, T.J. Choi, S. H. Shin, J. C. Lee, M. J. Lee, S.A. Seo, I.K. Yoo, "The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films", Key Engineering Materials, Vols. 306-308, pp. 1313-1318, 2006
Online since
March 2006
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$32.00
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