Paper Title:
Microcracking in Monocrystalline Silicon due to Indentation and Scratching
  Abstract

This paper discusses the cracking in monocrystalline silicon induced by microindentation with spherical and Berkovich indenters and scratching. It was found cracks always commenced in a specimen’s subsurface beneath the transformation zone. While using a Berkovich indenter the level of the maximum indentation load, Pmax, to initiate microcracking was lower than the case with a spherical indenter. In both indentation and scratching all microcracks took place at the sites of slip intersection or emanated from the bottom of a transformation zone. The paper also discussed critical loads for microcracking.

  Info
Periodical
Edited by
Hong-Yuan Liu, Xiaozhi Hu and Mark Hoffman
Pages
345-350
DOI
10.4028/www.scientific.net/KEM.312.345
Citation
I. Zarudi, L. C. Zhang, "Microcracking in Monocrystalline Silicon due to Indentation and Scratching", Key Engineering Materials, Vol. 312, pp. 345-350, 2006
Online since
June 2006
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Price
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