This paper discusses the cracking in monocrystalline silicon induced by microindentation with spherical and Berkovich indenters and scratching. It was found cracks always commenced in a specimen’s subsurface beneath the transformation zone. While using a Berkovich indenter the level of the maximum indentation load, Pmax, to initiate microcracking was lower than the case with a spherical indenter. In both indentation and scratching all microcracks took place at the sites of slip intersection or emanated from the bottom of a transformation zone. The paper also discussed critical loads for microcracking.