Solid State Reaction Synthesis and Thermoelectric Properties of Ag-Doped Mg2Si0.8Ge0.2 |
|
| Journal | Key Engineering Materials (Volume 313) |
|---|---|
| Volume | Composite Materials IV |
| Edited by | Chi Y.A. Tsao and Jing Kun Guo |
| Pages | 177-182 |
| DOI | 10.4028/www.scientific.net/KEM.313.177 |
| Citation | Qiong Zhen Liu et al., 2006, Key Engineering Materials, 313, 177 |
| Online since | July, 2006 |
| Authors | Qiong Zhen Liu, Lian Meng Zhang, Qiang Shen, Hong Yi Jiang, Chuan Bin Wang |
| Keywords | Mg2Si0.8Ge0.2, Solid State Reaction, Thermoelectric Property |
| Abstract | By two-step solid state reaction, Mg2Si0.8Ge0.2 was successfully synthesized .The effect of Ag-doping concentration on the thermoelectric transport properties of p-type Mg2Si0.8Ge0.2 was investigated. With the increasing of Ag-doping concentration, the electrical conductivity σ and Seebeck coefficient α increase correspondingly over the measuring temperature range (300-800K).The peaks of the curves of Seebeck coefficient versus temperature shift towards the lower temperature .When the doping concentration of Ag is 16000ppm(nominal molar percent), the power factor P of Mg2Si0.8Ge0.2 reaches 4.4×10-4W/mK2 at 800K,obviously improved in comparison with the sample with no additive . |
| Full Paper |
Get the full paper by clicking here
|
