Paper Title:

Visualized Characterization of Slurry during CMP Based on LIF

Periodical Key Engineering Materials (Volumes 315 - 316)
Main Theme Advances in Machining & Manufacturing Technology VIII
Edited by Zhejun Yuan, Xipeng Xu, Dunwen Zuo, Julong Yuan and Yingxue Yao
Pages 279-283
DOI 10.4028/www.scientific.net/KEM.315-316.279
Citation Ju Long Yuan et al., 2006, Key Engineering Materials, 315-316, 279
Online since July, 2006
Authors Ju Long Yuan, Fei Yan Lou, Zhao Zhong Zhou, Zhi Wei Wang, Bing Hai Lv
Keywords Chemical Mechanical Polishing (CMP), Fluorescence Ratio, Laser Induced Fluorescence (LIF), Polishing
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Abstract

Chemical mechanical polishing has emerged recently as an indispensable processing technique in large scale integration. In chemical and mechanical polishing process, chemical and mechanical principle is the vital factor in the removal process. Little is known about what is occurring beneath a wafer during Chemical Mechanical Polishing (CMP) processes. The paper provides a LIF technology to visualize the fluid flow between the wafer and pad. In this paper, the experiment setup is built. And then, the images of fluorescence intensity excited by LIF have been obtained from CCD. Finally, the relationships between pH, temperature, laser power, film thickness and fluorescence intensity excited by LIF (Laser induced Fluorescence) are studied.