Low-Temperature Sintering of α- and β-SiC Powders with AlB2 Additive |
| Journal |
Key Engineering Materials (Volumes 317 - 318) |
| Volume |
The Science of Engineering Ceramics III |
| Edited by |
T. Ohji, T. Sekino and K. Niihara |
| Pages |
23-26 |
| DOI |
10.4028/www.scientific.net/KEM.317-318.23 |
| Online since |
August, 2006 |
| Authors |
Hidehiko Tanaka,
Toshiyuki Nishimura,
Naoto Hirosaki,
Y. Kishi,
H. Matsuo,
Y. Ichikawa
|
| Keywords |
Aluminum Boride, Carbon, Hot Isostatic Pressing (HIP), Low-Temperature Sintering, Silicon Carbide (SiC) |
| Abstract |
We sintered α
(6H)- and β(3C)-SiC powders using an Al-B-C additive. SiC powders
were densified to > 98% of the theoretical density from 1950 to 2150oC with 0.67-2.7 mass % AlB2
and 2.0 mass % C. Sintering temperatures are 150-200 oC lower than the conventional. During
sintering, 6H polytype in α-SiC powder was partly transformed to 4H. α-SiC powder grew
moderately into plate-shaped grains. β-/SiC powder was completely transformed to 6H and
subsequently 4H with large grain growth. Low-temperature sintering enabled us to use hot isostatic
pressing resulting in pore-free SiC materials. |
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