Low-Temperature Sintering of α- and β-SiC Powders with AlB2 Additive |
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| Journal | Key Engineering Materials (Volumes 317 - 318) |
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| Volume | The Science of Engineering Ceramics III |
| Edited by | T. Ohji, T. Sekino and K. Niihara |
| Pages | 23-26 |
| DOI | 10.4028/www.scientific.net/KEM.317-318.23 |
| Citation | Hidehiko Tanaka et al., 2006, Key Engineering Materials, 317-318, 23 |
| Online since | August, 2006 |
| Authors | Hidehiko Tanaka, Toshiyuki Nishimura, Naoto Hirosaki, Y. Kishi, H. Matsuo, Y. Ichikawa |
| Keywords | Aluminum Boride, Carbon, Hot Isostatic Pressing (HIP), Low Temperature Sintering, Silicon Carbide (SiC) |
| Abstract | We sintered α (6H)- and β(3C)-SiC powders using an Al-B-C additive. SiC powders were densified to > 98% of the theoretical density from 1950 to 2150oC with 0.67-2.7 mass % AlB2 and 2.0 mass % C. Sintering temperatures are 150-200 oC lower than the conventional. During sintering, 6H polytype in α-SiC powder was partly transformed to 4H. α-SiC powder grew moderately into plate-shaped grains. β-/SiC powder was completely transformed to 6H and subsequently 4H with large grain growth. Low-temperature sintering enabled us to use hot isostatic pressing resulting in pore-free SiC materials. |
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