Paper Title:
Deformation Behavior of SiO2 Doped Nanocrystalline Monoclinic Zirconia at Low Temperatures
  Abstract

The deformation behavior of SiO2 doped nanocrystalline monoclinic zirconia (MZP) was studied at 1323-1223 K in compression tests. The strain rate of SiO2 doped nanocrystalline MZP was slower than that of high-purity MZP by one order of magnitude. SiO2 doped nanocrystalline MZP exhibited a stress exponent n ≈ 2. The apparent activation energy for the deformation of SiO2 doped nanocrystalline MZP was characterized by a higher value than that observed for high-purity MZP. 1wt% SiO2 doped nanocrystalline MZP was deformed at constant flow stress, while the flow stress of high-purity MZP increased significantly with the strain (strain hardening). While no grain growth was observed after the compressive deformation of 1wt % SiO2 doped nanocrystalline MZP, remarkable grain growth was observed after the deformation of high-purity MZP. The addition of SiO2 into nanocrystalline MZP is effective in limiting grain growth at low temperatures

  Info
Periodical
Key Engineering Materials (Volumes 317-318)
Edited by
T. Ohji, T. Sekino and K. Niihara
Pages
433-436
DOI
10.4028/www.scientific.net/KEM.317-318.433
Citation
M. Yoshida, Y. Shinoda, T. Akatsu, F. Wakai, "Deformation Behavior of SiO2 Doped Nanocrystalline Monoclinic Zirconia at Low Temperatures", Key Engineering Materials, Vols. 317-318, pp. 433-436, 2006
Online since
August 2006
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$32.00
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