Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor |
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| Journal | Key Engineering Materials (Volumes 317 - 318) |
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| Volume | The Science of Engineering Ceramics III |
| Edited by | T. Ohji, T. Sekino and K. Niihara |
| Pages | 889-892 |
| DOI | 10.4028/www.scientific.net/KEM.317-318.889 |
| Citation | Yoon Suk Kim et al., 2006, Key Engineering Materials, 317-318, 889 |
| Online since | August, 2006 |
| Authors | Yoon Suk Kim, Han Chul Kim, Yong Chae Chung |
| Keywords | 3d Transition Metal, Density Functional Theory (DFT), Diluted Magnetic Semiconductor (DMS), Electronic Structures, β-SiC |
| Abstract | We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped ¯-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 μB regardless of substitution site. In addition, the SiC:CrSi is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices. |
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