Paper Title:
Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor
  Abstract

We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped ¯-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 μB regardless of substitution site. In addition, the SiC:CrSi is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices.

  Info
Periodical
Key Engineering Materials (Volumes 317-318)
Edited by
T. Ohji, T. Sekino and K. Niihara
Pages
889-892
DOI
10.4028/www.scientific.net/KEM.317-318.889
Citation
Y. S. Kim, H. C. Kim, Y. C. Chung, "Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor", Key Engineering Materials, Vols. 317-318, pp. 889-892, 2006
Online since
August 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Riccardo Rurali, E. Hernández, Phillippe Godignon, Jose Rebollo, P. Ordejón
649
Authors: Xue Gao, Jia Xiang Shang, Yue Zhang
Abstract:The electronic structures of anatase titanium oxides (TiO2) substitutional doping with N, F, C, P and S for O have been studied by...
2507
Authors: Yoon Suk Kim, Sung Ho Lee, Kyung Sub Lee, Yong Chae Chung
Abstract:The electronic structure and defect states of 6.25% transition metal (TM = Fe and Co) doped rutile titanium dioxide were investigated by ab...
787
Authors: Yong Ping Zheng, Ning Wei, Zhe Yong Fan, Lan Qing Xu, Zhi Gao Huang
Chapter 2: Frontiers of Materials Science and Engineering
Abstract:In this paper, first-principles calculations are performed to study the influence of atomic design on the structural and electronic...
676
Authors: Ganjar Kurniawan Sukandi, Triati Dewi Kencana Wungu, Ferry Iskandar
Chapter 4: Photovoltaics, Batteries and Fuel Cells: Emerging Materials and Devices
Abstract:First principle calculation based on Density Functional Theory and U correction (DFT+U) is used to investigate structural change while losing...
286