Paper Title:
High Frequency Dielectric Mapping Using Un-Contact Probe for Dielectric Materials
  Abstract

The microwave reflection intensity was measured at room temperature for Cu-plate, Al2O3 and SrTiO3 single crystals using a un-contact probe as a function of distance between sample and probe. The difference of reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was observed in the region where the distance of 0.2mm between sample and probe, and it was caused from dielectric permittivities of samples. The reflection coefficient of sample was estimated in comparison with results of electromagnetic simulation using finite differential time domain method. The reflection intensity for Cu-plate, Al2O3 and SrTiO3 single crystals was transformed to dielectric permittivity at reflection intensity minimum point. The dielectric permittivity mapping was also examined at reflection intensity minimum point.

  Info
Periodical
Edited by
Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
189-192
DOI
10.4028/www.scientific.net/KEM.320.189
Citation
H. Kakemoto, S. M. Nam, S. Wada, T. Tsurumi, "High Frequency Dielectric Mapping Using Un-Contact Probe for Dielectric Materials", Key Engineering Materials, Vol. 320, pp. 189-192, 2006
Online since
September 2006
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$32.00
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