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Influence of Annealing on Domain Structures of Bismuth-Titanate-Based Crystals

Journal Key Engineering Materials (Volume 320)
Volume Electroceramics in Japan IX
Edited by Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages 27-30
DOI 10.4028/www.scientific.net/KEM.320.27
Citation Shinichi Katayama et al., 2006, Key Engineering Materials, 320, 27
Online since September, 2006
Authors Shinichi Katayama, Yuji Noguchi, Masaru Miyayama
Keywords Bismuth Titanate, Domain Structure, Piezoresponse Force Microscopy, Rare Earth Substitution
Abstract

Influence of annealing on the domain structures of bismuth titanate (BiT) and rare-earth (La and Nd)-substituted BiT crystals (BLT or BNT) were investigated by optical microscope and piezoresponse force microscope (PFM). Annealing of BiT at 950°C in air significantly decreased the number of striped 90° domain walls, while charged 180° domain walls were still present in the crystals after the annealing. The annealing for the crystals of BLT and BNT at the same condition did not change their 90° domain structures. PFM observations indicated that antiphase domain boundaries in BLT play an important role in the formation of 90° domain structures.

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