Paper Title:
Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics /HfO2 Stacking Layers
  Abstract

The Y0.5Yb0.5MnO3 ferroelectrics/HfO2 stacking layer was constructed on Si(100) substrate through the chemical solution deposition. The HfO2 insulating layer crystallized on Si(100) substrates consisted of uniform grains and had smooth surface. The Y0.5Yb0.5MnO3 film prepared on the HfO2 insulator layer had preferred orientation along c-axis. The Y0.5Yb0.5MnO3 film consisted of uniform grains and had smooth surface. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the MFIS structure. The memory window of the MFIS structure was about 2 V and the retention time was over 105 s.

  Info
Periodical
Edited by
Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
Pages
73-76
DOI
10.4028/www.scientific.net/KEM.320.73
Citation
K. Suzuki, Y. P. Guo, K. Nishizawa, T. Miki, K. Kato, "Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics /HfO2 Stacking Layers", Key Engineering Materials, Vol. 320, pp. 73-76, 2006
Online since
September 2006
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