B- and P-Doped Si0.8Ge0.2 Thin Film Deposited by Helicon Sputtering for the Micro-Thermoelectric Gas Sensor |
|
| Journal | Key Engineering Materials (Volume 320) |
|---|---|
| Volume | Electroceramics in Japan IX |
| Edited by | Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki |
| Pages | 99-102 |
| DOI | 10.4028/www.scientific.net/KEM.320.99 |
| Citation | Kazuki Tajima et al., 2006, Key Engineering Materials, 320, 99 |
| Online since | September, 2006 |
| Authors | Kazuki Tajima, Woosuck Shin, Maiko Nishibori, Norimitsu Murayama, Toshio Itoh, Noriya Izu, Ichiro Matsubara |
| Keywords | Helicon Sputtering, High Temperature Annealing, Hydrogen Sensor, Silicon-Germanium (SiGe), Thermoelectric |
| Abstract | Micro-thermoelectric hydrogen sensor (micro-THS) with the combination of the thermoelectric effect of Si0.8Ge0.2 thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation was prepared by microfabrication process. In the viewpoint of high sensitivity of micro-THS, the thermoelectric properties of the Si0.8Ge0.2 thin film could be improved by optimizing carrier concentration using helicon sputtering with an advantage of easy doping control, and sensitivity of the device with this thin film was investigated. As the result, the boron-doped Si0.8Ge0.2 thin film is considered to be the better choice ensuring the reliable monitoring of hydrogen concentration down to ppm level. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
