Paper Title:
Characterization of CMOS Pixel Detectors for Digital X-Ray Imaging
  Abstract

In order to develop a cost-effective digital X-ray imaging system, we considered a CMOS (complementary metal-oxide-semiconductor) photodiode array in conjunction with a scintillation screen. Imaging performance was evaluated in terms of MTF (modulation-transfer function), NPS (noise-power spectrum) and DQE (detective quantum efficiency). The presampled MTF was measured using a slanted-slit method. The NPS was determined by 2-dimensional Fourier analysis. Both the measured MTF and NPS, and a self-developed computational model for the X-ray spectral analysis were used to determine the spatial frequency-dependent DQE. From the measured MTF, the spatial resolution was found to be about 10.5 line pairs per millimeter (lp/mm). For a 45-kVp tungsten spectrum, the measured DQE around zero spatial frequency was about 40%.

  Info
Periodical
Key Engineering Materials (Volumes 321-323)
Edited by
Seung-Seok Lee, Joon Hyun Lee, Ik Keun Park, Sung-Jin Song, Man Yong Choi
Pages
1052-1055
DOI
10.4028/www.scientific.net/KEM.321-323.1052
Citation
M. K. Cho, H. K. Kim, T. Graeve, J. M. Kim, "Characterization of CMOS Pixel Detectors for Digital X-Ray Imaging", Key Engineering Materials, Vols. 321-323, pp. 1052-1055, 2006
Online since
October 2006
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$32.00
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