Paper Title:
Determination of the Mechanism Based Deposition Processes of Thin Film in OLED
  Abstract

Physical vapor deposition technique has been employed to develop a thin film of OLED, and atomic force microscopy was used to investigate the boundary characteristics such as uniformity of emitting layer, roughness, and surface morphology. In order to determine the deposition characteristic which associated with the materials failure in OLED, finite element simulation, together with alternative analytical modeling has been carried out by means of island growth mechanism analysis. The boundary growth of thin film can be determined from the velocity of island boundary using simple rate equations. The results obtained are compared with experimental observation. Generally good agreement has been achieved.

  Info
Periodical
Key Engineering Materials (Volumes 321-323)
Edited by
Seung-Seok Lee, Joon Hyun Lee, Ik Keun Park, Sung-Jin Song, Man Yong Choi
Pages
1431-1434
DOI
10.4028/www.scientific.net/KEM.321-323.1431
Citation
K. K. Lee, K. S. Lee, T. W. Kim, "Determination of the Mechanism Based Deposition Processes of Thin Film in OLED", Key Engineering Materials, Vols. 321-323, pp. 1431-1434, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Samatcha Vorathamrong, Patchareewan Prongjit, Somsak Panyakeow, Somchai Ratanathammaphan, Piyasan Praserthdam, Chiraporn Thongyam
Chapter 1: Semiconductors and Nanosystems in Electronics
Abstract:We report on the study on effect of Ga pre-deposition rate on GaAs nanowires grown by self-assisted vapor-liquid-solid (VLS) method. Ga...
12