Paper Title:
Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition
  Abstract

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

  Info
Periodical
Key Engineering Materials (Volumes 321-323)
Edited by
Seung-Seok Lee, Joon Hyun Lee, Ik Keun Park, Sung-Jin Song, Man Yong Choi
Pages
1687-1690
DOI
10.4028/www.scientific.net/KEM.321-323.1687
Citation
H. J. Kim, D. Y. Jang, P. K. Shishodia, A. Yoshida, "Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition", Key Engineering Materials, Vols. 321-323, pp. 1687-1690, 2006
Online since
October 2006
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Price
$32.00
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