Direct CTE Measurement Technique for the MEMS Materials

The accurate characterization of linear coefficient of thermal expansion (CTE) of thin films is vital for predicting the thermal stress, which often results in warpage and failure of a MEMS structure. In this paper, special emphasis is placed on the development of novel test method to extend an ISDG (Interferometric Strain/Displacement Gage) technique to the direct and accurate CTE measurement of MEMS materials, AlN and Au. The freestanding AlN and Au films are 1 μm thick and 5 mm wide. Strain is directly measured by a brand-new digital type ISDG with two Cr lines deposited on the specimen while heating a specimen in a furnace. The whole test system is verified first by measuring the CTE for the NIST’s SRM (Standard Reference Material) 736 (Cu) block. The measured CTE is 17.3 με/oC up to 167 oC, which agrees well with the NIST’s certified value. The CTE of Au is 25.4 ± 1.15 με/oC and that of AlN film is 3.77 ± 0.12 με/oC. The in-plane displacement resolution is about 5 nm at the best circumstances.