Paper Title:
Integrated Tunneling Device for High Sensitive Sensor Applications
  Abstract

This paper describes an integrated tunneling sensor for applications of an electronic nose and a scanning probe microscope. Ultra-thin silicon dioxide having a thickness of ~2 nm is used as a material of the tunneling sensor. It provides much higher sensitivity in comparison with others sensing methods. The tunneling sensor is placed on a fixed edge where the maximum strain arises. As additional masses or forces are added to the surface of the cantilever, the thickness of the thin silicon dioxide layer is slightly decreased. By using exponential nature of electron tunneling dominated by the thickness of the silicon dioxide it can be used as an ultra-high sensitive sensor. The thin dioxide is fabricated by dry oxidation using a vertical furnace. The cantilever structures are defined by conventional MEMS technologies. Current density of the tunneling sensor is evaluated as a function of voltage and is compared with numerical analysis based on direct tunneling phenomena.

  Info
Periodical
Key Engineering Materials (Volumes 326-328)
Edited by
Soon-Bok Lee and Yun-Jae Kim
Pages
317-320
DOI
10.4028/www.scientific.net/KEM.326-328.317
Citation
D. W. Lee, Y. S. Choi, I. K. Oh, "Integrated Tunneling Device for High Sensitive Sensor Applications", Key Engineering Materials, Vols. 326-328, pp. 317-320, 2006
Online since
December 2006
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Price
$32.00
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