Paper Title:
Synthesis of Vertically Aligned Carbon Nanotubes by dc PECVD
  Abstract

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for CNT growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using plasma enhanced chemical vapor deposition (PECVD). In the present study, we synthesized aligned CNT arrays using a direct current (dc) PECVD system. The synthesis of CNTs requires a metal catalyst layer, etchant gas, and a carbon source. In this study, the substrate consisted of Si wafers with 10, 30, and 50 nm Ni-sputtered film. Ammonia (NH3) and acetylene (C2H2) were used as the etchant gases and carbon source, respectively. NH3 pretreatment was processed using a flow rate of 180 sccm for 10 min. CNTs were grown on pretreated substrates at 30% C2H2:NH3 flow ratios for 10 min. Carbon nanotubes with diameters ranging from 60 to 80 nanometers and lengths of about 2.7 μm were obtained. Vertical alignment of the carbon nanotubes was observed by FE-SEM.

  Info
Periodical
Key Engineering Materials (Volumes 326-328)
Edited by
Soon-Bok Lee and Yun-Jae Kim
Pages
333-336
DOI
10.4028/www.scientific.net/KEM.326-328.333
Citation
Y. Y. Bang, T. J. Je, K. H. Whang, W. S. Chang, "Synthesis of Vertically Aligned Carbon Nanotubes by dc PECVD", Key Engineering Materials, Vols. 326-328, pp. 333-336, 2006
Online since
December 2006
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$32.00
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