Paper Title:
Scanning Tunneling Microscopy Studies of Porous and Oxidized Zn
  Abstract

This paper reports the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) studies of porous Zn (p- Zn) prepared by electrochemical etching. Further, the post annealing of the p- Zn is carried out and STM/STS investigations are also performed. STM studies of these samples reveal the porous structure and display small, pseudo-spherical shaped crystals in the range of 2 and 100 nm, 2 and 50 nm, and similar average corrugation of 9 nm for p- Zn and oxidized p-Zn. STS analysis of freshly prepared p- Zn shows a band gap of 2.4 eV along with metallic conductance behavior. However, oxidized p- Zn reveals a distinct wide band gap (3 eV) and shows shallow donor states near the conduction band.

  Info
Periodical
Key Engineering Materials (Volumes 326-328)
Edited by
Soon-Bok Lee and Yun-Jae Kim
Pages
373-376
DOI
10.4028/www.scientific.net/KEM.326-328.373
Citation
S. S. Chang, A. Sakai, "Scanning Tunneling Microscopy Studies of Porous and Oxidized Zn", Key Engineering Materials, Vols. 326-328, pp. 373-376, 2006
Online since
December 2006
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Price
$32.00
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