Paper Title:
Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding
  Abstract

In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

  Info
Periodical
Key Engineering Materials (Volumes 326-328)
Edited by
Soon-Bok Lee and Yun-Jae Kim
Pages
609-612
DOI
10.4028/www.scientific.net/KEM.326-328.609
Citation
Q. Wang, S. H. Choa, W. B. Kim, J. S. Hwang, S. J. Ham, C. Y. Moon, "Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding", Key Engineering Materials, Vols. 326-328, pp. 609-612, 2006
Online since
December 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: V.D. Akhmetov, Martin Kittler, Winfried Seifert, S. Marschmeyer, Hans Richter, Peter Formanek, J. Doerschel
647
Authors: Han Xu, Amy Shen, Vlad Tarasov, Brian White, Josh Wolf
345
Authors: Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori, K. Saito, I. Mizobata, T. Iwata, S. Hirae
355
Authors: Y.J. Kim, J.H. Lee, K.J. Seo, C.R. Yoon, E.S. Roh, J.K. Cho, T. Hattori
Abstract:Stripping high-dose ion-implanted (HDI) photoresists is considered as one of the most challengeable processes in the semiconductor...
269
Authors: Shigeru Hirono, Hironori Torii, Tetsuya Tajima, Takao Amazawa, Shigeru Umemura, Tomoyuki Kamata, Yasuo Hirabayashi
Abstract:A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap film...
725