Paper Title:
Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films
  Abstract

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

  Info
Periodical
Key Engineering Materials (Volumes 326-328)
Edited by
Soon-Bok Lee and Yun-Jae Kim
Pages
613-616
DOI
10.4028/www.scientific.net/KEM.326-328.613
Citation
D. J. Yang, S. J. Cho, J. O. Kim, W. Y. Choi, "Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films", Key Engineering Materials, Vols. 326-328, pp. 613-616, 2006
Online since
December 2006
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$32.00
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