Paper Title:
Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers
  Abstract

Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320 at a pressure of 2.5. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9.

  Info
Periodical
Key Engineering Materials (Volumes 326-328)
Edited by
Soon-Bok Lee and Yun-Jae Kim
Pages
617-620
DOI
10.4028/www.scientific.net/KEM.326-328.617
Citation
G. S. Park, J. H. Yu, S. W. Seo, W. B. Choi, K. K. Paek, M. Y. Sung, H. W. Park, S. K. Yun, B. K. Ju, "Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers", Key Engineering Materials, Vols. 326-328, pp. 617-620, 2006
Online since
December 2006
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Price
$32.00
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