The radio frequency (RF) sputtering method was utilized to grow PZT-based ferroelectric thin films with the chemical composition Pb(Zr0.53Ti0.45W0.01Cd0.01O3). The thin films were characterized in terms of their microstructure, crystalline structure, chemical composition and dielectric properties. The processing conditions diagram was defined, which ensured conservation of stoichiometry of the chemical composition of the thin films. Complex impedance spectroscopy was used to measure frequencydependent dielectric properties of the PZT-type thin films. Great application potential of the PZT-based thin films was considered and possibility to employ as-obtained PZT thin films as active elements of the piezoelectric sensors was reported.