Paper Title:
Synthesis of Fine Grain Ti3SiC2 by Spark Plasma Sintering with Additive of Aluminum
  Abstract

High purity polycrystalline titanium silicon carbide (Ti3SiC2) was synthesized by spark plasma sintering (SPS) with additive of Aluminum at low temperature of 1100~1300oC. XRD results showed that the content of Ti3SiC2 in the synthesized bulks increased with the addition of Aluminum, however, the lattice parameters of Ti3SiC2 samples with different amounts of additive exhibited scarcely change. With a starting powder of 1Ti/1.2Si/2TiC/0.1Al (molar ratios), dense Ti3SiC2 ceramic (98vol.%Ti3SiC2) was obtained by sintering at 1100oC for 5min under a pressure of 30MPa. Fine Plate-like grains of the samples with sizes of 2~6μm could be identified by scanning electronic microscope (SEM).

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
1046-1049
DOI
10.4028/www.scientific.net/KEM.336-338.1046
Citation
R. B. Han, W. Pan, M. H. Fang, S. L. Shi, L. H. Qi, "Synthesis of Fine Grain Ti3SiC2 by Spark Plasma Sintering with Additive of Aluminum", Key Engineering Materials, Vols. 336-338, pp. 1046-1049, 2007
Online since
April 2007
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$32.00
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