Paper Title:
Ablated Transformation and Dielectric of SiO2/SiO2 Nanocomposites Dipped with Silicon Resin
  Abstract

SiO2/ SiO2 nanocomposites dipped with silicon resin was ablated and the physical state and phase transformation were characterized. Trace impurity in raw material and compound obtained by chemical reaction were analyzed. Moreover, the high-temperature dielectric properties were investigated. On the basis of above, it is found that the impurity carbon and silicon carbide are the key factors influencing dielectric properties.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
1239-1241
DOI
10.4028/www.scientific.net/KEM.336-338.1239
Citation
M. S. Cao, H. B. Jin, J. G. Li, L. Zhang, Q. Xu, X. Li, L. T. Xiong, "Ablated Transformation and Dielectric of SiO2/SiO2 Nanocomposites Dipped with Silicon Resin", Key Engineering Materials, Vols. 336-338, pp. 1239-1241, 2007
Online since
April 2007
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