Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method |
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| Journal | Key Engineering Materials (Volumes 336 - 338) |
|---|---|
| Volume | High-Performance Ceramics IV |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 146-148 |
| DOI | 10.4028/www.scientific.net/KEM.336-338.146 |
| Citation | Y.H. Sun et al., 2007, Key Engineering Materials, 336-338, 146 |
| Online since | April, 2007 |
| Authors | Y.H. Sun, X.B. Liu, Min Chen, J. Liu, S. Chen, Z.M. Wan |
| Keywords | Bi4Ti3O12, Doping, Ferroelectric, Thin Film |
| Abstract | Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 260 kV/cm, Pr and Ec of the BNT film with x=0.5 annealed at 650oC are 19 μC/cm2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×1010 read/write cycles. |
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