Paper Title:
Preparation and Synthetic Mechanism of Silicon Carbide Nanometer Whiskers
  Abstract

β-SiC nanometer whiskers were prepared in a double heating furnace that is composed of the interior and exterior heating systems. The SiO2 nanometer powder and char pyrolyzed from phenol formaldehyde resin were used as starting materials. The effects of sintering temperature and holding time on β-SiC nanometer whiskers were investigated and the synthetic mechanism was studied. It was revealed that the β-SiC nanometer whiskers, with the diameter of 50-80nm and the aspect ratio of 50-300, can be prepared at 1300°C for 60 min. The purity of the β-SiC nanometer whiskers is about 99%.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
2077-2078
DOI
10.4028/www.scientific.net/KEM.336-338.2077
Citation
Q. Y. Li, Z. W. Song, R. Zhao, W. H. Xue, Y. J. Qiao, "Preparation and Synthetic Mechanism of Silicon Carbide Nanometer Whiskers", Key Engineering Materials, Vols. 336-338, pp. 2077-2078, 2007
Online since
April 2007
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