Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods |
| Journal |
Key Engineering Materials (Volumes 336 - 338) |
| Volume |
High-Performance Ceramics IV |
| Edited by |
Wei Pan and Jianghong Gong |
| Pages |
21-23 |
| DOI |
10.4028/www.scientific.net/KEM.336-338.21 |
| Online since |
April, 2007 |
| Authors |
Qiu Sun,
Ying Song,
Fu Ping Wang
|
| Keywords |
Ferroelectric Property, PZT, Sol-Gel |
| Abstract |
The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on
Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of
PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V
characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage
current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with
1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J =
4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found. |
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