Highly conductive IrO2 thin films were prepared on Si (100) substrates by pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. The effect of substrate temperature on the structure and electrical properties of IrO2 films was investigated. The deposited films at substrate temperatures ranging from 250 to 500°C under an oxygen pressure of 20Pa were pure polycrystalline tetragonal IrO2 and the preferential growth orientation changed with the substrate temperature. IrO2 films were well solidified with the fairly homogeneous thickness and exhibited a good adhesion with the substrate. The room-temperature resistivity of IrO2 films decreased with the increase of substrate temperature and the minimum resistivity of (42±6) μ-·cm was deposited at 500°C.