Paper Title:
Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature
  Abstract

Si films were deposited by inductively coupled plasma chemical vapor deposition at room temperature with a mixture of SiH4/H2. The microstructure of the film was characterized with Fourier transform of infrared, Raman spectroscopy, atomic force microscopy. We found that SiH4 concentration strongly affects the structure of Si films and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration. The analysis for optical properties of the films suggested that the optical band gap EOPT of films are distinctively lower than those of amorphous Si films. It has been observed that the EOPT of sample decreases with the increasing of H content in film.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
2228-2231
DOI
10.4028/www.scientific.net/KEM.336-338.2228
Citation
X. Q. Wang, D. Y. He, J. S. Li, "Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature", Key Engineering Materials, Vols. 336-338, pp. 2228-2231, 2007
Online since
April 2007
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Price
$32.00
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