Paper Title:
Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method
  Abstract

(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
283-286
DOI
10.4028/www.scientific.net/KEM.336-338.283
Citation
Z. Zheng, X. T. Li, G. R. Han, W. J. Weng, P. Y. Du, "Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method", Key Engineering Materials, Vols. 336-338, pp. 283-286, 2007
Online since
April 2007
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$32.00
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