SiC-AlN solid solution powders were prepared from the mixtures of aluminum, silicon and carbon black in a nitrogen atmosphere with preheating self-propagating high temperature synthesis (SHS) method. The powders synthesized with different ratios of Al/Si were mixed with paraffin wax and the microwave permittivity of the mixtures was measured at the frequency of 8.2~12.4GHz. The results were contrasted with that of SiC powders synthesized by preheating SHS in argon and nitrogen atmosphere respectively. The ε′, ε″, and the tgδ (ε″/ε′) of the mixture of SiC prepared in a nitrogen atmosphere are highest, followed with those of the SiC-AlN solid solution powders and the SiC powders prepared in an argon atmosphere. Along with the increase of atomic ratio of Al/Si, the ε′, ε″, and tgδ of SiC-AlN solid solution decrease. We believe that, with the increase of AlN dissolved, the concentration of carriers and the effect of dielectric relaxation will decrease because of the two contrary dopants.