Paper Title:
Growth and Characterization of Zinc Oxide Films by Pulsed Laser Deposition for Ultraviolet Detection
  Abstract

ZnO thin films were grown on single-crystal Si(100) substrate by pulsed laser deposition (PLD) technique. The crystal structure and electrical properties were investigated as a function of oxygen partial pressure. Results indicate that highly c-axis oriented ZnO films can be obtained at all oxygen pressure range. With the increase of oxygen pressure, the crystallinity is further enhanced and the film presents smooth, uniform and dense packed columnar microstructure. Hall measurement indicates the resistivity of ZnO films increases with oxygen pressure. ZnO film grown at optimum conditions is employed to fabricate the MSM structured UV detectors with Ti/Pt/Au interdigital electrode configuration by standard photolithography and lift-off technique. The I-V characteristic and photo response measurement indicate a good ohmic contact between the ZnO film and electrode, and significant photoresponsivity under ultraviolet illumination.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
577-580
DOI
10.4028/www.scientific.net/KEM.336-338.577
Citation
X. M. Li, J. L. Zhao, J. M. Bian, W. D. Yu, "Growth and Characterization of Zinc Oxide Films by Pulsed Laser Deposition for Ultraviolet Detection", Key Engineering Materials, Vols. 336-338, pp. 577-580, 2007
Online since
April 2007
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Price
$32.00
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