In this paper, we have investigated the near-infrared luminescence emitting from NiSi2 passivated silicon nanocrystals (NCs) embedded in SiOx films. For comparison, we also prepared the regular specimen without NiSi2 passivation. In the both systems, the intensity of photoluminescence emission from NC-Si increased with the increase of annealing temperature, which was explained by the crystallization of amorphous silicon in SiOx films. The maximum intensity of near-infrared emission from NiSi2-passivated NC-Si was stronger by factor 5 than that of regular specimen without NiSi2 passivation. The model of NiSi2 passivation was employed to explain this phenomenon.