Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate |
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| Journal | Key Engineering Materials (Volumes 336 - 338) |
|---|---|
| Volume | High-Performance Ceramics IV |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 69-72 |
| DOI | 10.4028/www.scientific.net/KEM.336-338.69 |
| Citation | Xue Feng Ma et al., 2007, Key Engineering Materials, 336-338, 69 |
| Online since | April, 2007 |
| Authors | Xue Feng Ma, Shu Bin Wang, Yue Zhang |
| Keywords | BST Thin Film, MgO Buffer Layer, MOCVD, Sol-Gel |
| Abstract | Epitaxial MgO thin films were deposited on Si(100) substrate by atmospheric-pressure metalorganic chemical vapor deposition for using as buffer layers. Ba0.6Sr0.4TiO3 thin films were prepared on MgO/Si(100) substrate by sol-gel technique. The independence of crystallinity on annealing temperature was investigated. The Ba0.6Sr0.4TiO3 (BST) thin films are crystallized in preferential (100) orientation after post-deposition annealing at 850°C and 950°C for 2h in air, respectively. Rutherford backscattering spectroscopy analysis confirmed that both the BST and MgO films have stoichiometric composition. |
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