Paper Title:
Improved Electrodeposition of CuIn1-xGaxSe2 Films
  Abstract

CuIn1-xGaxSe2(CIGS) precursor films are fabricated on Mo foil by coelectrodeposition. The influence of the applied potential and the electrolyte additive in the process of electrodeposition are discussed. The precursor films are annealed in Ar for a short time to synthesize the polycrystalline thin film. The annealed layers are only phase-pure CuIn0.7Ga0.3Se2 and show a good crystallinity.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
758-759
DOI
10.4028/www.scientific.net/KEM.336-338.758
Citation
F. Long, J. J. Li, T. Gu, Z. G. Zou, "Improved Electrodeposition of CuIn1-xGaxSe2 Films", Key Engineering Materials, Vols. 336-338, pp. 758-759, 2007
Online since
April 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Muhammad Aamir Hassan, Muhammad Mujahid, Lydia Helena Wong
Chapter 6: Materials for Solar Cells, Energy Storage and Electronics
Abstract:The performance of copper indium gallium disulfoselenide (CIGSSe) solar cells strongly depends on the band bap of absorbing layer of CIGSSe....
143