Improved Electrodeposition of CuIn1-xGaxSe2 Films |
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| Journal | Key Engineering Materials (Volumes 336 - 338) |
|---|---|
| Volume | High-Performance Ceramics IV |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 758-759 |
| DOI | 10.4028/www.scientific.net/KEM.336-338.758 |
| Citation | Fei Long et al., 2007, Key Engineering Materials, 336-338, 758 |
| Online since | April, 2007 |
| Authors | Fei Long, Jian Jun Li, Tao Gu, Zheng Guang Zou |
| Keywords | CuIn1-xGaxSe2, Electrodeposition, Film, Solar Cell |
| Abstract | CuIn1-xGaxSe2(CIGS) precursor films are fabricated on Mo foil by coelectrodeposition. The influence of the applied potential and the electrolyte additive in the process of electrodeposition are discussed. The precursor films are annealed in Ar for a short time to synthesize the polycrystalline thin film. The annealed layers are only phase-pure CuIn0.7Ga0.3Se2 and show a good crystallinity. |
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