Paper Title:
Large Thermoelectric Response of Ti-Containing Perovskite Oxides
  Abstract

Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face of LaAlO3 single crystal substrates by a pulsed-laser deposition. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT reached 0.37 (20%-Nb-doped SrTiO3 epitaxial film) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported.

  Info
Periodical
Key Engineering Materials (Volumes 336-338)
Edited by
Wei Pan and Jianghong Gong
Pages
809-813
DOI
10.4028/www.scientific.net/KEM.336-338.809
Citation
H. Ohta, S. Ohta, K. Koumoto, "Large Thermoelectric Response of Ti-Containing Perovskite Oxides", Key Engineering Materials, Vols. 336-338, pp. 809-813, 2007
Online since
April 2007
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Price
$32.00
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