Paper Title:
The Effect of Technological Condition on Electrical Properties of ITO Films
  Abstract

The transparent ITO multi-layers films were fabricated on quartz glass substrate by colloid dip-coating technique from indium metal ingots and stannic chloride. It was systematically studied that the effect of the electrical properties of the ITO on doped Sn in quantitative change, different dip-coating technological conditions such as thermal treatment process, coating number plies by four-probe instrument. From the 5 wt. % Sn to 20 wt. % Sn, with the amount of doped Sn increasing, the sheet resistance of ITO was up to minimum and then increased. Sintering temperature and holding time were the reasons for the electrical properties of the ITO films, when other parameters are unaltered. It is also concluded that coating number plies was play an important role on electrical properties of ITO films by sheet resistance. From the results of research, it can be seen that the multi-layer films has optimum characteristics, whose sheet resistance is 117'/□, when the use level of Sn is 10%wt,heated in 800°C 15min with repeated dip-coating seven times..

  Info
Periodical
Key Engineering Materials (Volumes 345-346)
Edited by
S.W. Nam, Y.W. Chang, S.B. Lee and N.J. Kim
Pages
1233-1236
DOI
10.4028/www.scientific.net/KEM.345-346.1233
Citation
S. N. Zeng, J. X. Liu, N. Zhang, "The Effect of Technological Condition on Electrical Properties of ITO Films", Key Engineering Materials, Vols. 345-346, pp. 1233-1236, 2007
Online since
August 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Bum Rae Cho
Abstract:Indium tin oxide (ITO) used in many applications such as electronic and optical devices were deposited on the soda lime glass substrate by...
195
Authors: Sang Moo Park, Takashi Tomemori, Tomoaki Ikegami, Kenji Ebihara
Abstract:High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at...
211
Authors: Chien Chen Diao, Chao Chin Chan, Chia Ching Wu, Cheng Fu Yang
Abstract:“GfE Coating Materials Company” had developed a novel AZOY transparent conducting oxide (TCO) material that used ZnO as raw material and...
653
Authors: Samsiah Ahmad, N.D.M. Sin, M.N. Berhan, Mohamad Rusop Mahmood
Chapter 7: Surface Engineering
Abstract:Zinc Oxide (ZnO) films were prepared on unheated glass substrate by radio frequency (RF) magnetron sputtering technique and post deposition...
602
Authors: Shafaq Mardhiyana Mohamat Kasim, Nor Azira Akma Shaari, Raudah Abu Bakar, Sukreen Hana Herman
Chapter 3: Composite Materials and Composite Properties of Materials
Abstract:Single layer of titanium dioxide (TiO2) is common metal oxide in fabricating memristor device. In this study, two types of...
308