Paper Title:
Figure of Merit for Thermoelectric Generation Obtained by Enhanced Transport Properties of [100] Oriented Beta-FeSi2 Film
  Abstract

beta-FeSi2 films were prepared on Si(001) substrates by the molecular beam epitaxy method using an Fe source. The crystallographic orientation of beta-FeSi2 films on Si(001) substrates were characterized by using x-ray diffraction. Using scanning electron microscopy, surface morphology and film thickness of an oriented sample were observed and estimated. The mobility of beta-FeS2 films on Si(001) substrates was also characterized by Hall measurement at room temperature. The enhancement of figure of merit was evaluated as the functions of mobility and crystallographic orientation of samples.

  Info
Periodical
Edited by
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
Pages
121-124
DOI
10.4028/www.scientific.net/KEM.350.121
Citation
H. Kakemoto, T. Higuchi, H. Shibata, S. Wada, T. Tsurumi, "Figure of Merit for Thermoelectric Generation Obtained by Enhanced Transport Properties of [100] Oriented Beta-FeSi2 Film", Key Engineering Materials, Vol. 350, pp. 121-124, 2007
Online since
October 2007
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