Fabrication of HfO2 Thin Film on Si Substrate by Double-Pulse Excitation PLD |
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| Journal | Key Engineering Materials (Volume 350) |
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| Volume | Electroceramics in Japan X |
| Edited by | K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki |
| Pages | 129-132 |
| DOI | 10.4028/www.scientific.net/KEM.350.129 |
| Citation | Tomohiro Tabara et al., 2007, Key Engineering Materials, 350, 129 |
| Online since | October, 2007 |
| Authors | Tomohiro Tabara, Naoki Wakiya, Takanori Kiguchi, Junzo Tanaka, Kazuo Shinozaki |
| Keywords | Double Pulse Laser Excitation, Electrical Property, HfO2, PLD, Thin Film |
| Abstract | Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10-1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective. |
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