Paper Title:
Fabrication of HfO2 Thin Film on Si Substrate by Double-Pulse Excitation PLD
  Abstract

Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10-1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.

  Info
Periodical
Edited by
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
Pages
129-132
DOI
10.4028/www.scientific.net/KEM.350.129
Citation
T. Tabara, N. Wakiya, T. Kiguchi, M. Tanaka, K. Shinozaki, "Fabrication of HfO2 Thin Film on Si Substrate by Double-Pulse Excitation PLD", Key Engineering Materials, Vol. 350, pp. 129-132, 2007
Online since
October 2007
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$32.00
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