Paper Title:
Study on Recovery of Electrical Degradation of ZnO Varistors
  Abstract

The relationship between the crystal structure of Bi2O3 and the recovery of the electrical degradation of ZnO varistors was investigated. The evaluation methods used were analysis of the voltage-current (V-I) characteristics, scanning electron microscopy (SEM), energy-dispersion X-ray spectroscopy (EDX), and X-ray diffraction (XRD) measurements. The electrical degradation was estimated by the nonlinearity of the V-I characteristics. A marked recovery of the nonlinearity of the V-I characteristics was observed for a sample having the crystal structure of δ-type Bi2O3. It is speculated that the electrical degradation is markedly recovered for optimum conditions of both the amount and the crystal structure of the added Bi2O3, because, for samples sintered for a long time, the recovery speed is shorter than that for samples sintered for a shorter time. During long-time sintering, the amount of Bi2O3 decreased because of evaporation. No change of the crystal structure of Bi2O3 was observed upon repeated the electrical degradation and the recovery. It is suggested that another mechanism apart from the diffusion of oxygen ions through the grain boundaries of ZnO particles contributes to the electrical degradation and recovery of the nonlinearity of V-I characteristics.

  Info
Periodical
Edited by
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
Pages
209-212
DOI
10.4028/www.scientific.net/KEM.350.209
Citation
H. Yoshida, M. Takada, S. Yoshikado, "Study on Recovery of Electrical Degradation of ZnO Varistors", Key Engineering Materials, Vol. 350, pp. 209-212, 2007
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Sergey Kozyukhin, Alexey A. Sherchenkov
Abstract:Phase change memory materials of Ge-Sb-Te system [(GeTe)m(Sb2Te3)n (m : n = 1:1; 1:2; 2:1)] were studied during thermal cycling by...
22
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439
Authors: Kai Yap Pan, Abdul H. Shaari, Soo Kien Chen, Kean Pah Lim, Manizheh Navasery, Mohd Mustafa Awang Kechik
Chapter 5: Manganite and Magnetic Materials
Abstract:The influence of sintering temperature on structural, microstructure and transports properties of...
283
Authors: Yao Sun, Hong Wang
Chapter 5: Thin Film, Membrane and Coating Materials
Abstract:The influence of deposition mode of the ZnO underlayer on the thermal stability of 20nm thick Ag films in the ZnO/Ag/SiN multilayer stacks...
1018