Paper Title:
Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials
  Abstract

We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system.

  Info
Periodical
Edited by
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
Pages
221-224
DOI
10.4028/www.scientific.net/KEM.350.221
Citation
T. Yokota, T. Kuribayashi, T. Shundo, K. Hattori, Y. Sakakibara, M. Gomi, "Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials", Key Engineering Materials, Vol. 350, pp. 221-224, 2007
Online since
October 2007
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