Magnetic and Dielectric Properties of a Metal/ Cr2O3/Cr2O3-x/Cr2O3/Semiconductor Capacitor Using Magneto-Electric Materials |
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| Journal | Key Engineering Materials (Volume 350) |
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| Volume | Electroceramics in Japan X |
| Edited by | K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki |
| Pages | 221-224 |
| DOI | 10.4028/www.scientific.net/KEM.350.221 |
| Citation | Takeshi Yokota et al., 2007, Key Engineering Materials, 350, 221 |
| Online since | October, 2007 |
| Authors | Takeshi Yokota, Takaaki Kuribayashi, Takeshi Shundo, Keita Hattori, Yasutoshi Sakakibara, Manabu Gomi |
| Keywords | Capacitance Measurement, Dielectric Properties, FET, Magnetic Properties, Magneto-Electric Effect, MIS Devices |
| Abstract | We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr2O3)/semiconductor (Si) (MIS) capacitor composed of magneto-electric (ME) materials. The capacitor has anti-ferromagnetic properties and a very small electrically induced magnetic moment. It also shows capacitance-voltage (C-V) properties typical of a Si-MIS capacitor without any hysteresis. By inserting a thin Cr2O3-x layer, the C-V curve has a hysteresis window with a clockwise trace, which indicates that electrons have been injected into the Cr2O3-x layer. These results indicate that this MIS capacitor contains a floating gate and an ME insulating layer in a single system. |
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