Paper Title:
Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique
  Abstract

Growth of ferroelectric Bi2WO6 (BWO) mono-domain bulk crystals was attempted by the vertical-Bridgman (VB) method below the phase transition (ferro- to paraelectric) temperature of 940oC using Li2B4O7 as a flux. In this method, Pt crucibles with different shapes were used. The crucible with a wedged tip bottom produced BWO crystal with a thickness of over 4 mm along the crystallographic c-axis (perpendicular to the spontaneous polarization axis). Using BWO mono-domain crystals grown by slow cooling technique, on the other hand, their electric properties were characterized. The dielectric constants, ε ij, and electromechanical coupling factor, k33, of the crystals were 70-100 and 36% at room temperature, respectively.

  Info
Periodical
Edited by
K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki
Pages
81-84
DOI
10.4028/www.scientific.net/KEM.350.81
Citation
M. Nishida, H. Takeda, T. Nishida, T. Shiosaki, "Syntheisis and Characterization of Bismuth Tungstate Crystals by Solution Growth Technique", Key Engineering Materials, Vol. 350, pp. 81-84, 2007
Online since
October 2007
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$32.00
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