Epitaxial Growth of B-Axis Oriented BaTi2O5 Films by Laser Ablation |
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| Journal | Key Engineering Materials (Volume 352) |
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| Volume | Innovation in Ceramic Science and Engineering |
| Edited by | Katsutoshi Komeya, Yohtaro Matsuo and Takashi Goto |
| Pages | 311-314 |
| DOI | 10.4028/www.scientific.net/KEM.352.311 |
| Citation | Chuan Bin Wang et al., 2007, Key Engineering Materials, 352, 311 |
| Online since | August, 2007 |
| Authors | Chuan Bin Wang, Rong Tu, Takashi Goto |
| Keywords | BaTi2O5 Film, B-Axis Orientation, Epitaxial Growth, Laser Ablation |
| Abstract | A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5 films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen partial pressures (PO2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020) preferred orientation, depending on Tsub and PO2. At PO2 = 12.5 Pa and Tsub = 950 - 1000 K, the BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5 (020) [100] // MgO (100) [001] and BaTi2O5 (020) [100] // MgO (100) [010]. |
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