Paper Title:
Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution
  Abstract

Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 μm/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The, ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc-second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.

  Info
Periodical
Edited by
Katsutoshi Komeya, Yohtaro Matsuo and Takashi Goto
Pages
89-94
DOI
10.4028/www.scientific.net/KEM.352.89
Citation
K. Suzuki, K. Kusunoki, N. Yashiro, N. Okada, K. Kamei, A. Yauchi, "Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution", Key Engineering Materials, Vol. 352, pp. 89-94, 2007
Online since
August 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker
67
Authors: Kazuhiko Kusunoki, S. Munetoh, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima
123
Authors: Jung Kyu Kim, Kap Ryeol Ku, Dong Jin Kim, Sang Phil Kim, Won Jae Lee, Byoung Chul Shin, Geun Hyoung Lee, Il Soo Kim
Abstract:SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal...
47
Authors: Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda
Abstract:Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700°C. The seed...
37
Authors: Tatsuo Fujimoto, Noboru Ohtani, Shinya Sato, Masakazu Katsuno, Hiroshi Tsuge, Wataru Ohashi
Chapter 1: SiC Bulk Growth
Abstract:Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of...
21