Paper Title:
Synthesis of Boron Carbonitride Films by Plasma-Based Ion Implantation
  Abstract

BCN films were prepared with unbalanced magnetron sputtering boron carbide film followed by nitrogen plasma-based ion implantation at different voltages on Si substrate. The implantation voltages vary from 10 kV to 50 kV. The chemical states of B, C and N of the films were studied with X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The nano-hardness and elastic modulus of films were measured by Nano-Indenter. The results showed that amorphous BCN films formed in the nitrogen implanted layer. The amorphous peak becomes obvious with increasing of the implanted voltage when the voltage is under of 40 kV. The Nano-Indenter measurement showed that the B-C bond content and the disorder degree affect the hardness and modulus.

  Info
Periodical
Key Engineering Materials (Volumes 353-358)
Edited by
Yu Zhou, Shan-Tung Tu and Xishan Xie
Pages
1850-1853
DOI
10.4028/www.scientific.net/KEM.353-358.1850
Citation
S. Y. Xu, X. X. Ma, M. R. Sun, "Synthesis of Boron Carbonitride Films by Plasma-Based Ion Implantation ", Key Engineering Materials, Vols. 353-358, pp. 1850-1853, 2007
Online since
September 2007
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Price
$32.00
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