Paper Title:
XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films
  Abstract

Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiCxOy), between the SiO2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.

  Info
Periodical
Key Engineering Materials (Volumes 353-358)
Edited by
Yu Zhou, Shan-Tung Tu and Xishan Xie
Pages
1871-1874
DOI
10.4028/www.scientific.net/KEM.353-358.1871
Citation
K. Xue, L. S. Niu, H. J. Shi, J. W. Liu, "XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films", Key Engineering Materials, Vols. 353-358, pp. 1871-1874, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A. Trinchi, W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S.J. Ippolito, K. Kalantar-Zadeh, G. Sberveglieri
Abstract:The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive...
123
Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto
Abstract:Deposited SiN/SiO2 stack gate structures have been investigated to improve the 4H-SiC MOS interface quality. Capacitance-voltage...
679
Authors: H.Y. Seba, R. Cherfi, Farida Hamadache, M. Aoucher
Abstract:This communication reports on the effect of thermal annealing on the physicochemical and electrical properties of boron doped amorphous...
129
Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan
Chapter 2: Surface, Subsurface and Interface Phenomena
Abstract:Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different...
302